Simulation of GaN and AlGaN static induction transistorsALPTEKIN, Emre; AKTAS, Ozgur.Solid-state electronics. 2006, Vol 50, Num 5, pp 741-749, issn 0038-1101, 9 p.Article

Tuning of the Nickel Silicide Schottky Barrier Height on p-Type Silicon by Indium ImplantationALPTEKIN, Emre; OZTURK, Mehmet C.IEEE electron device letters. 2009, Vol 30, Num 12, pp 1272-1274, issn 0741-3106, 3 p.Article

Schottky Barrier Height of Nickel Silicide Contacts Formed on Si_1―xC_x Epitaxial LayersALPTEKIN, Emre; OZTURK, Mehmet C.IEEE electron device letters. 2009, Vol 30, Num 12, pp 1320-1322, issn 0741-3106, 3 p.Article

Ni_xPt_1―xSi/n-Si contacts with sub-0.1 eV effective Schottky barrier heights obtained by sulfur segregationALPTEKIN, Emre; OZTURK, Mehmet C.Microelectronic engineering. 2010, Vol 87, Num 11, pp 2358-2360, issn 0167-9317, 3 p.Article

Tuning of the Platinum Silicide Schottky Barrier Height on n-Type Silicon by Sulfur SegregationALPTEKIN, Emre; OZTURK, Mehmet C; MISRA, Veena et al.IEEE electron device letters. 2009, Vol 30, Num 4, pp 331-333, issn 0741-3106, 3 p.Article

Schottky Barrier Height of Erbium Silicide on Si_1―xC_xALPTEKIN, Emre; OZTURK, Mehmet C; MISRA, Veena et al.IEEE electron device letters. 2009, Vol 30, Num 9, pp 949-951, issn 0741-3106, 3 p.Article

Low damage etching of GaN surfaces via bias-assisted photoenhanced electrochemical oxidation in deionized waterALPTEKIN, Emre; HONGBO YU; OZBAY, Ekmel et al.Journal of electronic materials. 2007, Vol 36, Num 6, pp 629-633, issn 0361-5235, 5 p.Article

Application of a hybrid intelligent decision support model in logistics outsourcingISIKLAR, Giilfem; ALPTEKIN, Emre; BÜYÜKÖZKAN, Gülcin et al.Computers & operations research. 2007, Vol 34, Num 12, pp 3701-3714, issn 0305-0548, 14 p.Article

Platinum Germanosilicide Contacts Formed on Strained and Relaxed Si_1―xGe_x LayersALPTEKIN, Emre; KIRKPATRICK, Casey Joe; MISRA, Veena et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 6, pp 1220-1227, issn 0018-9383, 8 p.Article